@InProceedings{GalvãoVPMGCDM:2016:GrEpGr,
               author = "Galv{\~a}o, Nierlly K. A. M. and Vasconcelos, Get{\'u}lio and 
                         Pessoa, Rodrigo S{\'a}vio and Machado, Jo{\~a}o Paulo Barros and 
                         Guerino, Marciel and Camus, Julien and Djouadi, Mohamed Abdou and 
                         Maciel, H. S.",
          affiliation = "{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto de Estudos Avan{\c{c}}ados (IEAv)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Institut des 
                         Mat{\'e}riaux Jean Rouxel IMN} and {Institut des Mat{\'e}riaux 
                         Jean Rouxel IMN} and {Instituto Tecnol{\'o}gico de 
                         Aeron{\'a}utica (ITA)}",
                title = "Grow of epitaxial graphene on SiC thin film using CO2 laser beam",
                 year = "2016",
         organization = "International Conference on Advanced Nanomaterials, 7.",
             abstract = "When SiC is heated under specific annealing conditions, the layers 
                         of SiC crystals are decomposed. The Si sublimation occurs and the 
                         remaining carbon atoms form the epitaxial graphene layer1 . 
                         Usually this process takes place using induction furnaces at 
                         vacuum or at atmospheric pressure with an inert gas flow. The 
                         kinetics of formation, the structure and properties of graphene 
                         are influenced by the process parameters and also by the 
                         orientation and terminated face of the SiC wafer substrate1,2. 
                         Recently, the use of CO2 laser as a source of heating in graphene 
                         formation from single crystal of SiC and SiC particles have been 
                         reported2,3 . The use of this technique is still new and technical 
                         feasibility of grapheme formation using SiC thin films, to the 
                         best of our knowledge, were not yet reported. In this work, the 
                         viability of graphene growth by thermal decomposition of SiC thin 
                         films using CO2 laser was investigated. The SiC thin films were 
                         grown by plasma deposition technique using high-power impulse 
                         magnetron sputtering (HiPMS). Unlike what happens with graphene 
                         grown on single crystal SiC, the graphene was grown on the SiC 
                         thin film with undefined (SiC) facetermination. The obtained films 
                         were characterized thanks to chemical, structural and electrical 
                         analysis using the mapping RAMAN, atomic force microscopy (AFM), 
                         and 4 points probe, respectively.",
  conference-location = "Aveiro, Portugal",
      conference-year = "25-27 July",
             language = "en",
        urlaccessdate = "28 abr. 2024"
}